all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 8 rev. 02, 2014-10-31 PXFC192207SH thermally-enhanced high power rf ldmos fet 220 w, 28 v, 1805 C 1990 mhz description the PXFC192207SH is a 220-watt ldmos fet intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 mhz frequency band. features include input and output matching, high gain and thermally-enhanced pack - age with earless flanges. manufactured with infineon's ad - vanced ldmos process, this device provides excellent thermal performance and superior reliability. PXFC192207SH package h-37288g-4/2 rf characteristics two-carrier wcdma specifcations (tested in infneon production test fxture) v dd = 28 v, i dq = 1600 ma, p out = 50 w avg, ? 1 = 1980 mhz, ? 2 = 1990 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 19 20 db drain effciency h d 29 30.5 % intermodulation distortion imd C32 C29 dbc features ? broadband internal input and output matching ? typical pulsed cw performance, 1880 mhz, 28 v, 10 s pulse width, 10% duty cycle, class ab - output power at p 1db = 220 w - effciency = 55% - gain = 20 db ? typical single-carrier wcdma performance, 1880 mhz, 28 v, 10 db par @ 0.01% ccdf - output power = 50 w - effciency = 29% - gain = 20 db - acpr = C34 dbc @5 mhz ? capable of handling 10:1 vswr @28 v, 200 w (cw) output power ? integrated esd protection ? low thermal resistance ? pb-free and rohs compliant 0 8 16 24 32 40 48 56 15 16 17 18 19 20 21 22 29 33 37 41 45 49 53 efficiency (%) gain (db) output power (dbm) two - carrier wcdma drive - up v dd = 28 v, i dq = 1600 ma, v gs = 2.75 v, ? = 1880 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz gain efficiency c192207sh_g1
data sheet 2 of 8 rev. 02, 2014-10-31 PXFC192207SH dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1 a v ds = 63 v, v gs = 0 v i dss 10 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.03 w operating gate voltage v ds = 28 v, i dq = 1600 ma v gs 2.3 2.6 2.9 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal resistance (t case = 70c, 200 w cw) r qjc 0.28 c/w ordering information type and version order code package description shipping PXFC192207SH v1 r250 PXFC192207SHv1r250xtma1 h-37288g-4/2, earless fange tape & reel, 250 pcs
PXFC192207SH `data sheet 3 of 8 rev. 02, 2014-10-31 typical performance (data taken in a production test fxture) 0 10 20 30 40 50 60 -65 -55 -45 -35 -25 -15 -5 29 33 37 41 45 49 53 efficiency (%) imd & acpr (dbc) output power (dbm) two - carrier wcdma drive - up v dd = 28 v, i dq = 1600 ma, v gs = 2.75 v, ? = 1880 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz imd low imd up acpr efficiency c192207sh_g2 -65 -55 -45 -35 -25 -15 29 33 37 41 45 49 53 imd (dbc) output power (dbm) two - carrier wcdma drive - up v dd = 28 v, i dq = 1600 ma, v gs = 2.75v, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz 1805 imdl 1805 imdu 1842.5 imdl 1842.5 imdu 1880 imdl 1880 imdu c192207sh_g3 0 10 20 30 40 50 60 15 16 17 18 19 20 21 27 32 37 42 47 52 57 efficiency (%) gain (db) output power (dbm) pulsed cw performance at various v dd i dq = 1600 ma, ? = 1880 mhz 24v gain 28v gain 32v gain 24v eff 28v eff gain efficiency c192207sh_g5 0 10 20 30 40 50 60 16 17 18 19 20 21 22 27 32 37 42 47 52 57 efficiency (%) gain (db) output power (dbm) pulsed cw performance v dd = 28 v, i dq = 1600 ma 1805 gain 1842.5 gain 1880 gain 1805 eff 1842.5 eff 1880 eff efficiency gain c192207sh_g4
data sheet 4 of 8 rev. 02, 2014-10-31 PXFC192207SH typical performance (cont.) broadband circuit impedance z source z load g s d freq [mhz] z source w z load w r jx r jx 1805 1.57 C6.18 1.13 C3.50 1843 1.50 C5.97 1.11 C3.32 1880 1.42 C5.76 1.09 C3.18 load pull performance main side load pull performance C pulsed cw signal: 10 s, 10% duty cycle, v dd = 28 v, i dq = 1600 ma p 1db max output power max pae freq [mhz] zs [ w] zl [w] gain [db] p out [dbm] p out [w] pae [%] zl [w] gain [db] p out [dbm] p out [w] pae [%] 1805 0.62 C j4.61 0.79 C j3.74 19.7 54.30 269 50.8 2.00 C j3.31 22.7 52.30 170 61.7 1880 1.25 C j5.48 0.82 C j3.85 19.9 54.40 275 52.8 1.62 C j3.45 22.1 53.00 200 62.1 1930 1.83 C j6.05 0.79 C j4.00 19.5 54.30 269 51.1 1.60 C j3.33 22.2 52.50 178 61.2 1990 3.23 C j6.50 0.81 C j4.14 20.1 54.10 257 51.4 1.40 C j3.31 22.7 52.00 158 60.1 -20 -15 -10 -5 0 17 18 19 20 21 1650 1750 1850 1950 2050 input return loss (db) gain (db) frequency (mhz) small signal cw performance gain & input return loss v dd = 28 v, i dq = 1600 ma irl gain c192207sh_g6
PXFC192207SH `data sheet 5 of 8 rev. 02, 2014-10-31 reference circuit , 1805 C 1880 mhz reference circuit assembly diagram (not to scale) c102 rf_in rf_out v dd p x f c 1 9 2 2 0 7 s h _ c d _ 1 0 - 2 4 - 2 0 1 4 c101 c103 c104 r 102 r 101 c205 c 204 c 206 c208 c 207 r 802 r 801 r 803 c 202 c 201 c 203 ro4350 , .020 (62) ro 4350 , .020 pxfc 192207sh_in_01 PXFC192207SH_out _01 c803 r 804 c 801 c802 c210 c209 s 1 + s 2 v dd v dd s 3
data sheet 6 of 8 rev. 02, 2014-10-31 PXFC192207SH reference circuit (cont.) reference circuit assembly dut PXFC192207SH v1 test fixture part no. ltn/PXFC192207SH v1 pcb rogers 4350, 0.508 mm [0.020] thick, 2 oz. copper, r = 3.66, ? = 1805 C 1880 mhz find gerber fles for this test fxture on the infneon web site at http://www.infneon.com/rfpower components information component description suggested manufacturer p/n input c101, c103 capacitor, 33 pf atc atc800a330jt250 c102 capacitor, 0.9 pf atc atc800a0r9ct250 c104 capacitor, 10 f taiyo yuden umk325c7106mm-t c801, c802, c803 capacitor, 1000 pf panasonic electronic components ecj-1vb1h102k r101, r102, r801 resistor, 10 w panasonic electronic components erj-8geyj100v r802 resistor, 100 w panasonic electronic components erj-8geyj101v r803 resistor, 1300 w panasonic electronic components erj-3geyj132v r804 resistor, 1200 w panasonic electronic components erj-3geyj122v s1 transistor infneon technologies bcp56 s2 voltage regulator texas instruments lm78l05acm s3 potentiometer, 2k w bourns inc. 3224w-1-202e output c201 capacitor, 33 pf atc atc800a330jt250 c202 capacitor, 0.5 pf atc atc800b0r5cw500 c203, c204, c205, c206, c207, c208 capacitor, 10 f taiyo yuden umk325c7106mm-t c209, c210 capacitor, 220 f panasonic electronic components eee-fp1v221ap
PXFC192207SH `data sheet 7 of 8 rev. 02, 2014-10-31 package outline specifcations package h-37288g-4/2 find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower 2x 2. 29 [. 090 ] 1 . 98 [. 078 ] 21. 72 [. 855 ] 2x 30 . 0 4x r0. 51 +. 38 - . 13 [ r.020 +. 015 - . 005 ] 2x 17. 75 [. 699 ] 9. 78 [. 385 ] c l c l c l 45 x . 64 [. 025 ] 9. 40 [. 370 ] g d v v 4x 53 2x 0. 13 0.08 [. 005 . 003 ] (sph d , g ) 1. 00 +0 . 25 - 0. 10 [ . 039 +. 010 - . 004 1. 490.25 [. 059 . 010 ] 4x 53 2x 0. 13 0.08 [. 005 . 003 ] (sph d , g ) 2 x 0.13 +0.13 - 0. 08 [ . 005 +. 005 - . 003 ] ( sph v) +0 . 25 - 0. 10 +. 010 - . 004 ] 1. 490.25 [. 059 . 010 ] ( 14. 750 . 50 [. 581 . 020 ]) d 22. 35. 20 [. 880 . 008 ] 23 . 11 [. 910 ] 4. 04 +. 25 - . 13 [ . 159 +. 010 - . 005 ] 1. 02 [. 040 ] s h - 372 88 g - 4 / 2 _ g w _ po _ 01 _ 07 - 18 - 2013 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d C drain; g C gate; s C source; v C v dd . 5. lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch].
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